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Volumn 62, Issue 1-3, 1997, Pages 621-623

Sensors on low-dimensional silicon structures

Author keywords

Hydrogen sulfide sensors; Low dimensional silicon structures

Indexed keywords

AMORPHOUS SILICON; CARBON DIOXIDE; CARBON MONOXIDE; HYDROCARBONS; HYDROGEN SULFIDE; POROSITY; POROUS SILICON; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

EID: 0031177438     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01621-X     Document Type: Article
Times cited : (13)

References (7)
  • 2
    • 23344446670 scopus 로고
    • Adsorbate effects on photoluminescence and electrical conductivity of porous silicon
    • M. Ben-Chorin, A. Kux and I. Schechter, Adsorbate effects on photoluminescence and electrical conductivity of porous silicon, Appl. Phys. Lett., 64 (1994) 481-483.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 481-483
    • Ben-Chorin, M.1    Kux, A.2    Schechter, I.3
  • 3
    • 34548253671 scopus 로고
    • Nonlinear electrical transport in porous silicon
    • M. Ben-Chorin, F. Moller and F. Koch, Nonlinear electrical transport in porous silicon, Phys. Rev. B, 49 (1994) 2981-2984.
    • (1994) Phys. Rev. B , vol.49 , pp. 2981-2984
    • Ben-Chorin, M.1    Moller, F.2    Koch, F.3
  • 4
    • 0000302419 scopus 로고    scopus 로고
    • Mehanizmi vlijanija adsorbzii molekul na rekombinazionnie prozessi v poristom kremnii
    • P.K. Kashkarov, E.A. Konstantinova and V.Y. Timoshenko, Mehanizmi vlijanija adsorbzii molekul na rekombinazionnie prozessi v poristom kremnii, Fiz. Tech. Polupr., 30 (1996) 1479-1489.
    • (1996) Fiz. Tech. Polupr. , vol.30 , pp. 1479-1489
    • Kashkarov, P.K.1    Konstantinova, E.A.2    Timoshenko, V.Y.3
  • 5
    • 0026867514 scopus 로고
    • Visible electroluminescence from p-type crystalline silicon/porous silicon/n-type microcrystalline silicon carbon pn junction diodes
    • T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura and K. Kitamura, Visible electroluminescence from p-type crystalline silicon/porous silicon/n-type microcrystalline silicon carbon pn junction diodes, Jpn. J. Appl. Phys., 31 (1992) L616-L618.
    • (1992) Jpn. J. Appl. Phys. , vol.31
    • Futagi, T.1    Matsumoto, T.2    Katsuno, M.3    Ohta, Y.4    Mimura, H.5    Kitamura, K.6
  • 7
    • 0016984575 scopus 로고
    • 2s with Pd-gate MOS field-effect transistors
    • 2S with Pd-gate MOS field-effect transistors, J. Appl. Phys., 47 (1976) 3592-3593.
    • (1976) J. Appl. Phys. , vol.47 , pp. 3592-3593
    • Shivaraman, M.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.