XPS analysis of surface compositional changes in InSb1-xBix (111) due to low-energy Ar+ ion bombardment

Applied Surface Science

Volumn 153, Issue 4, 2000, Pages 193-199

  Iwanowski, R J ^a   Heinonen, M H ^b   Raczynska J ^c   Fronc, K ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF TURKU   (Finland)

^c MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; BINDING ENERGY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ION BOMBARDMENT; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM ANTIMONIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033894444     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00485-7     Document Type: Article

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