Effect of implanted silicon on hydrogen behavior in aluminum and nickel

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 401-405

  Imanishi, Nobutsugu ^a   Ogura, Masahiko ^a,b   Ikeda, Mitsuharu ^a   Mitsusue, Ryuta ^a   Itoh, Akio ^a  

^a KYOTO UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; GRAIN BOUNDARIES; NICKEL; SILICON;

ELASTIC RECOIL DETECTION; HYDROGEN TRAPPING;

HYDROGEN;

EID: 0033893964     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00684-9     Document Type: Article

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