Piezoresistive properties of 3C-SiC films anodically bonded to aluminosilicate glass substrates

Electronics Letters

Volumn 36, Issue 6, 2000, Pages 497-498

  Sandhu, A ^a   Jinno, S ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BONDING; ELECTRIC PROPERTIES; GLASS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMAL EXPANSION; THIN FILMS;

ALUMINOSILICATE GLASS SUBSTRATES; ANODIC BONDING; HETEROJUNCTION PIEZORESISTIVE STRUCTURES; PIEZORESISTIVE PROPERTIES; THERMAL EXPANSION COEFFICIENT;

HETEROJUNCTIONS;

EID: 0033892770     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000463     Document Type: Article

References (7)

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3. STECKL, A.J., YUAN, C., TONG, Q.Y., GOSELE, U., and LOBODA, M.J.: 'SiC silicon-on-insulator structures by direct carbonization conversion and postgrowth from silacyclobutane', J. Electrochem. Soc., 1994, 141, pp. L166-L168
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7. HASHIMOTO, M., INABA, M., TAKIZAWA, T., TAKAHASHI, S., and ITO, T.: '2-axis and 3-axis silicon piezoresistive accelerometers', Fujikura Giho, 1997, 92, pp. 78-86