Surface reaction mechanism in MOVPE growth of ZnSe revealed using radicals produced by photolysis of alkyl azide

Applied Surface Science

Volumn 154, Issue , 2000, Pages 542-547

  Hayashi, Keiji ^a   Maeda, Akifumi ^a   Fujiyama, Masataka ^a   Kitagawa, Yoshiyasu ^a   Sakudo, Noriyuki ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FREE RADICALS; HYDROGEN; LASER BEAM EFFECTS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTODISSOCIATION; PHOTOLYSIS; QUANTUM THEORY; SEMICONDUCTOR GROWTH; SURFACE CHEMISTRY;

ALKYL AZIDE; LASER PHOTOLYSIS; QUANTUM CHEMISTRY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033892567     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00428-6     Document Type: Article

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