High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer

IEEE Electron Device Letters

Volumn 19, Issue 6, 1998, Pages 195-197

  Su, Jan Shing ^a   Hsu, Wei Chou ^a,c   Lin, Wei ^b   Jain, Shin Yuh ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0032094773     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.678542     Document Type: Article

References (12)

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