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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 250-254

Intersubband electro-absorption and retardation in coupled quantum wells: the role of interface scattering

(5) Kapon, R a Cohen, N a Thierry Mieg, V b Planel, R b Sa'ar, A a

a HEBREW UNIVERSITY OF JERUSALEM (Israel)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ABSORPTION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTROOPTICAL EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS;

ELECTRO RETARDATION; ELECTRON LOCALIZATION; INTERSUBBAND ELECTRO ABSORPTION; INTERSUBBAND TRANSITIONS; STARK SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033885270 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(99)00277-5 Document Type: Article

Times cited : (4)

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