Quantum interference, stark, and carrier density infrared electrooptical modulation based on intersubband transitions in asymmetrical quantum wells

IEEE Journal of Quantum Electronics

Volumn 33, Issue 9, 1997, Pages 1517-1526

  Sa'ar, Amir ^{a,b,c,d,e,f,g}   Kapon, Ruti ^b,d  

^a IEEE   (Israel)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^c Tel Aviv University ^*

^d TEL AVIV UNIVERSITY   (Israel)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^f Hebrew University of Jerusalem   (Israel)

^g Hebrew University of Jerusalem   (Israel)

Author keywords

Electrooptical materials devices; Electrooptical modulation; Infrared transducers; Optical communication; Quantum effect in semiconductors; Quantum well devices

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; ELECTROOPTICAL EFFECTS; INFRARED RADIATION; LIGHT MODULATORS; OPTICAL COMMUNICATION; PERTURBATION TECHNIQUES; QUANTUM INTERFERENCE DEVICES;

ELECTROOPTIC SUSCEPTIBILITY; INTERSUBBAND TRANSITIONS; STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031238337     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.622631     Document Type: Article

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