Modified Poisson solver for the simulation of the silicon-oxide interface in semiconductor detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 275-281

  Castoldi, A ^a   Rehak, P ^b   Gatti, E ^a   Guazzoni, C ^a   De Geronimo, G ^b  

^a POLITECNICO DI MILANO   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; INTERFACES (MATERIALS); ITERATIVE METHODS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

POISSON SOLVER; SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0033883815     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00902-X     Document Type: Article

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