Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Thin Solid Films

Volumn 361, Issue , 2000, Pages 84-87

  Cachet, H ^a   Cortes R ^a   Froment, M ^a   Etcheberry, A ^b  

^a CNRS   (France)

^b UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CRYSTAL ORIENTATION; ELECTRODEPOSITION; ELECTROLYTES; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

AQUEOUS ELECTROLYTES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0033882134     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00773-7     Document Type: Article

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