Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications

IEEE Journal of Quantum Electronics

Volumn 36, Issue 2, 2000, Pages 164-174

  Choy, Wallace C H ^a,b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERDIFFUSION (SOLIDS); LIGHT POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

POLARIZATION-INDEPENDENT (PI) OPTICAL GAIN;

QUANTUM WELL LASERS;

EID: 0033882111     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.823462     Document Type: Article

References (28)

1. B. N. Gomatam and N. G. Anderson, "Electroabsorption enhancement in tensile strained quantum wells via absorption edge merging," IEEE J. Quantum Electron., vol. 28, pp. 1496-1507, 1992.
2. K. Margari, M. Okarmoto, H. Yasaka, K. Sato, Y. Noguchi, and O. Mikami, "Polarization insensitive traveling wave type amplifier using strained multiple quantum well structure," IEEE Photon. Technol. Lett., vol. 2, pp. 556-558, 1990.
3. T. Aizawa, K. G. Ravikumar, S. Suzaki, T. Watanabe, and R. Yamanchi, "Polarization-independent quantum-confined stark effect in an InGaAs/InP tensile-strained quantum well," IEEE J. Quantum Electron, vol. 30, pp. 585-592, 1994.
4. E. S. Koteles, D. A. Owens, D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells" Surface Sci., vol. 228, pp. 314-317, 1990.
5. J. J. He, S. Charbonnneau, P. J. Poole, G. C. Aers, Y. Feng, E. S. Koteles, R. D. Goldberg, and I. V. Mitchell, "Polarization insensitive InGaAs/InGaAsP/InP amplifier using quantum well intermixing," Appl. Phys. Lett., vol. 69, pp. 562-564, 1996.
6. W. C. H. Choy, E. H. Li, M. C. Y. Chan, and B. L. Weiss, "Interdiffusion induced polarization independent optical gain of InGaAs-InP quantum well with carrier effects," IEEE J. Quantum Electron., vol. 35, pp. 913-921, 1999.
7. W. C. H. Choy, E. H. Li, and J. Micallef, "The polarization insensitive electro-absorptive and refractive modulation by utilizing InGaAsP-InP interduffused quantum well," IEEE J. Quantum Electron., vol. 33, pp. 1316-1322, 1997.
8. U. Das, S. Davis, R. V. Ramaswamy, and F. A. Stevie, "Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine-impurity-induced layer disordering," Appl. Phys. Lett., vol. 60, pp. 210-212, 1992.
9. 2 encapsulation and rapid thermal annealing," J. Appl. Phys., vol. 68, pp. 5256-5261, 1990.
10. J. M. Luttinger and W. Kohn, "Motion of electrons and holes in perturbed periodic fields," Phys. Rev., vol. 97, pp. 869-883, 1955.
11. 1-cursive Greek chi P epitaxial layers on (001) GaAs substrates," J. Appl. Phys., vol. 54, pp. 2052-2056, 1983.
12. 1-cursive Greek chi bulk alloys on (001) silicon substrates," Phys. Rev., vol. 32, pp. 1405-1408, 1995.
13. P. Lawaetz, "Valance-band parameters in cubic semiconductors," Phys. Rev. B, vol. 4, pp. 3460-3467, 1971.
14. D. Ahn and S. L. Chuang, "Modeling of the field-effect quantum-well laser with free-carrier screening and valence band mixing," J. Appl. Phys., vol. 64, pp. 6143-6149, 1988.
15. G. Bastard and J. A. Brum, "Electronic states in semiconductors heterostructures," IEEE J. Quantum Electron., vol. 22, pp. 1625-1644, 1986.
16. W. C. H. Choy and B. L. Weiss, "Interdiffusion induced modification of surface-acoustic-wave AlGaAs/GaAs quantum-well modulators," IEEE J. Select. Topics Quantum Electron., vol. 4, pp. 758-764, 1998.
17. A. T. Meney, "Exciton binding-energies and absorption in intermixed GaAs-AlGaAs quantum-wells," J. Appl. Phys., vol. 72, pp. 5729-5734, 1992.
18. L. Tsang, C. Chansungsan, and S. L. Chuang, "Adiabtic-following solutions for multisubband quantum wells excited by an ultrafast optical pump field," Phys. Rev. B, vol. 45, pp. 11918-11928, 1992.
19. D. Ahn and S. L. Chuang, "The theory of strained-layer quantum well lasers with bandgap renormalization," IEEE J. Quantum Electron., vol. 30, pp. 350-365, 1994.
20. H. Haug and S. Schmitt-Rink, "Basic mechanisms of the optical nonlinearities of semiconductors near the band edge," J. Opt. Soc. Amer. B, vol. 2, pp. 1135-1142, 1985.
21. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, Group III, O. Madelung, Ed. New York: Springer, 1982, vol. 17a, pp. 161-164.
22. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982.
23. cursive Greek chiAs: Material parameters for use in research and device applications," J. Appl. Phys., vol. 58, pp. R1-R29, 1985.
24. T. H. Glisson, J. R. Hauser, M. A. Littlejohn, and C. K. Williams, "Energy bandgap and lattice constant contours of III-V quaternary alloys," J. Electron. Mater., vol. 7, pp. 1-16, 1978.
25. W. Pan, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, "Tensile-strained GaAsP/AlGaAs quantum wells grown by low-pressure metalorganic vapor phase epitaxy," J. Appl. Phys., vol. 78, pp. 3517-3519, 1995.
26. D. Tunney, Ed., "Activities Report 1998 of Institute for Microstructural Sciences,", 1998.
27. G. Traänkle, E. Lach, A. Forchel, F. Scholz, C. Ell, H. Haug, G. Weiman, G. Griffiths, H. Kroemer, and S. Subbanna, "General relation between bandgap renormalization and carrier density in two-dimensional electron-hole plasmas," Phys. Rev. B, vol. 36, pp. 6172-6174, 1987.
28. S. H. Park, J. I. Shim, K. Kudo, M. Asada, and S. Arai, "Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers," J. Appl. Phys., vol. 72, pp. 279-281, 1992.