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Volumn 161, Issue , 2000, Pages 992-996
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Ion beam mixing and room temperature silicidation of Cu/Si(111) system by Ar+ ion irradiation
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON;
COPPER;
CRYSTALLINE MATERIALS;
EVAPORATION;
ION BEAMS;
ION BOMBARDMENT;
MATHEMATICAL MODELS;
MIXING;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON;
TEMPERATURE;
X RAY DIFFRACTION;
ANDERSONS CASCADE MIXING MODEL;
CRYSTALLINE PHASE FORMATION;
GRAZING INCIDENCE X RAY DIFFRACTION;
ION BEAM MIXING;
ROOM TEMPERATURE SILICIDATION;
THERMAL EVAPORATION;
THIN FILMS;
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EID: 0033878907
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(99)00774-0 Document Type: Article |
Times cited : (13)
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References (21)
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