Interface mixing in Ta/Si bilayers with Ar ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 1011-1015

  Bibic, N ^a   Dhar, S ^b   Milosavljevic, M ^a   Removic, K ^a   Rissanen, L ^b   Lieb, K P ^b  

^a UNIVERSITY OF BELGRADE   (Serbia)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEPOSITION; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; IRRADIATION; MIXING; PHASE TRANSITIONS; SYNTHESIS (CHEMICAL);

INTERFACE MIXING; ION FLUENCE; ROOM TEMPERATURE SYNTHESIS; TANTALUM SILICON ALLOYS;

TANTALUM ALLOYS;

EID: 0033878260     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00838-1     Document Type: Article

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