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Volumn 82, Issue 11, 1997, Pages 5480-5483

Growth kinetics of CoSi formed by ion beam irradiation at room temperature

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0007916345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366460     Document Type: Article
Times cited : (15)

References (22)
  • 2
    • 0000112472 scopus 로고
    • edited by N. G. Einspruch Academic, New York
    • M.-A. Nicolet and S. S. Lau, in VLSI Electronics 6, edited by N. G. Einspruch (Academic, New York, 1983), p. 330.
    • (1983) VLSI Electronics 6 , pp. 330
    • Nicolet, M.-A.1    Lau, S.S.2
  • 3
    • 0002916959 scopus 로고
    • edited by J. M. Poate, K. N. Tu, and J. W. Mayer Wiley, New York
    • K. N. Tu and J. W. Mayer, in Thin Films-Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978), p. 359.
    • (1978) Thin Films-Interdiffusion and Reactions , pp. 359
    • Tu, K.N.1    Mayer, J.W.2
  • 4
    • 0038758317 scopus 로고
    • edited by K. Maex and M. V. Rossum INSPEC, London
    • P. Gas and F. M. d'Heurle, in Properties of Metal Suicides, edited by K. Maex and M. V. Rossum (INSPEC, London, 1995), p. 279.
    • (1995) Properties of Metal Suicides , pp. 279
    • Gas, P.1    D'Heurle, F.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.