Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 120-123

  Popov, V P ^a   Antonova, I V ^a   Gutakovsky, A K ^a   Spesivtsev, E V ^a   Morosov, I I ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b BUDKER INSTITUTE OF NUCLEAR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; ELLIPSOMETRY; HYDROGEN; ION IMPLANTATION; OPTICAL PROPERTIES; PROTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HIGH DOSE IMPLANTATION; SPECTROSCOPIC ELLIPSOMETRY;

NANOSTRUCTURED MATERIALS;

EID: 0033877488     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00455-9     Document Type: Article

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