Growth of (111)-oriented PbTe films on Si(001) using a BaF2 buffer

Thin Solid Films

Volumn 358, Issue 1, 2000, Pages 277-282

  Belenchuk, A ^a   Fedorov, A ^b   Huhtinen, H ^c   Kantser, V ^a   Laiho, R ^c   Shapoval, O ^a   Zakhvalinskii, V ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b INSTITUTE FOR SINGLE CRYSTALS   (Ukraine)

^c UNIVERSITY OF TURKU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; THERMAL EFFECTS; TWINNING;

HOT-WALL-BEAM EPITAXY; THERMAL STRAIN;

SEMICONDUCTING FILMS;

EID: 0033876861     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00696-3     Document Type: Article

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