New simplified charge pumping current model and its model parameter extraction

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1857-1863

  Li, Hsin Hsien ^a   Chu, Yu Lin ^a   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS);

CHARGE PUMPING CURRENT MODELS; SHOCKLEY READ HALL THEORY;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030284971     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543019     Document Type: Article

References (12)

1. J. S. Burgler P. G. Jespers Charge pumping in MOS devices IEEE Trans. Electron Devices ED-16 297 1969
2. G. Groeseneken H. Maes N. Beltran R. DeKeersmaecker A reliable approach to charge-pumping measurements in MOS transistors IEEE Trans. Electron Devices ED-31 42 1984
3. U. Cilingiroglu A general model for interface-trap charge-pumping effects in MOS devices Solid‐State Electron. 28 1127 1985
4. P. Heremans J. Witters G. Groeseneken H. E. Maes Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation IEEE Trans. Electron Devices 36 1318 1989 16 1331 30938
5. H. Haddara G. Ghibaudo Analytical modeling of transfer admittance in small MOSFET's and application to interface state characterization Solid‐State Electron. 31 1077 1988
6. G. Ghibaudo N. S. Saks A time domain analysis of the charge pumping current J. Appl. Phys. 64 4751 1988
7. F. Hofmann W. Hansch The charge pumping method: Experiment and completely simulation J. Appl. Physics 66 3092 1989
8. P. Habas Charge-pumping characteristics of virgin and stressed lightly doped drain MOSFET's Solid‐State Electron. 38 891 1995
9. R. K. Perng C. Y. Wu A new algorithm for steady-state 2-D numerical simulation of MOSFETs Solid‐State Electron. 33 287 1990
10. N. S. Saks M. G. Ancona Determination of interface trap capture cross sections using three-level charge pumping IEEE Electron Device Lett. 11 339 1990 55 2103 57927
11. K. J. Rawlings S. C. Jain J. W. Leake Theory of conduction in weakly inverted MOSFETs: A new model for the conductance of an inhomogeneous channel Solid‐State Electon. 32 555 1989
12. H. H. Li C. Y. Wu A novel extraction technique for the effective channel length of MOSFET devices IEEE Trans. Electron Devices 42 856 1995 16 8655 381980