The image force effect on the barrier height in MOS structures: Correlation of the corrected barrier height with temperature and the oxide thickness

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 763-766

  Salace, G ^a   Hadjadj, A ^a   Petit, C ^a   Ziane, Dj ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GATES (TRANSISTOR); INTEGRAL EQUATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

FOWLER-NORDHEIM (FN) CURRENT; IMAGE FORCE EFFECT;

MOS DEVICES;

EID: 0033752211     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00311-X     Document Type: Article

References (16)

1. Kobayashi T, Horiguchi S, Kiuchi K. IEEE Tech Dig Int Electron Device Meet, 1984. p. 414.
2. Horiguchi S, Yoshino H. J Appl Phys 1985;58(4):1597-600.
3. Mohaidat JM, Ahmad-Bitar RN. Appl Phys Lett 1998;72:2256.
4. Pananakakis G, Ghibaudo G, Kies R. J Appl Phys 1995;78:2635.
5. Salace G, Hadjadj A, Petit C, Jourdain M. J Appl Phys 1999;85:7768.
6. Fowler RH, Nordheim LW. Proc Roy Soc (Lond) A 1938;119:173.
7. Sune J, Lanzoni M, Olivio P. IEEE Trans Electron Devices ED 1993:40:1017.
8. Lenzlinger M, Snow E. J Appl Phys 1969;40:278.
9. O'Dwyer FJ. In: Bawn GEH, Fröhlich H, Hirsch PB, Mott NF, editors. The theory of electrical conduction and breakdown in solids dielectrics. Oxford, Clarendon Press, 1973. p. 77.
10. Murphy EL, Good RH. Phys Rev 1956;92:1464.
11. Miller SC, Good RH. Phys Rev 1953;92:1367.
12. Burgess RE, Kromer H, Houston M. Phys Rev 1953:90:515.
13. Zafar S, Liu Q, Irene EA. J Vac Sci Technol A 1995;13:47.
14. Zafar S, Konrad KA, Liu Q, Irene EA, Harnes G, Huehn K, Wortman JJ. Appl Phys Lett 1995:67:1031.
15. Karlsson K, Nyqist O, Kanski I. Phys Rev Lett 1991:67:236.
16. Cazaux J. Semicond Sci Technol 1998;13:827.