Current-voltage characteristics of metal-insulator-semiconductor structures via quantum mechanical tunneling

Applied Physics Letters

Volumn 72, Issue 18, 1998, Pages 2256-2258

  Mohaidat, Jihad M ^a   Ahmad Bitar, Riyad N ^a  

^a UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES;

FOWLER-NORDHEIM TUNNELING; QUANTUM MECHANICAL TUNNELING; SCHRODINGER EQUATION;

MIS DEVICES;

EID: 0032069795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121270     Document Type: Article

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