Low threshold current densities for II-VI lasers

Electronics Letters

Volumn 36, Issue 10, 2000, Pages 878-879

  Strassburg, M ^a   Schulz, O ^a   Pohl, U W ^a   Bimberg, D ^a   Klude, M ^b   Hommel, D ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTS; LIGHT EMITTING DIODES; THRESHOLD VOLTAGE;

GREEN-LIGHT-EMITTING LASER DIODES; LOW THRESHOLD CURRENT DENSITIES;

SEMICONDUCTOR LASERS;

EID: 0033752119     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000673     Document Type: Article

References (14)

1. KIJIMA, S., OKUYAMA, H., SANAKA, Y., KOBAYASHI, T., TOMIYA, A., and ISHIBASHI, A.: 'Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II-VI laserdiodes', Appl. Phys. Lett., 1998, 73, pp. 235-237
2. KATO, E., NOGUCHI, H., NAGAI, M., OKUYAMA, H., KIJIMA, S., and ISHIBASHI, A.: 'Significant progress in II-VI blue-green laser diode lifetime', Electron. Lett., 1998, 34, (3), pp. 282-284
3. YASUDA, T., MITSUISHI, I., and KUKIMOTO, H.: 'Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSe', Appl. Phys. Lett., 1988, 52, pp. 57-59
4. 3N diffusion', Appl. Phys. Lett., 1994, 65, pp. 2437-2438
5. 3N diffusion', Jpn. J. Appl. Phys., 1996, 53, pp. 3878-3879
6. STRAßBURG, M., SCHULZ, O., POHL, U.W., BIMBERG, D., ITOH, S., NAKANO, K., and ISHIBASHI, A.: 'Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering', Electron. Lett., 2000, 36, pp. 44-45
7. KUTTLER, M., STRAßBURG, M., STIER, O., HEITZ, R., POHL, U.W., BIMBERG, D., KURTZ, E., NÜRNBERGER, J., BEHRINGER, M., and HOMMEL, D.: 'Doping dependent ZnCdSe/ZnSe-superlattice disordering', Appl. Phys. Lett., 1997, 71, pp. 243-245
8. ACHTENHAGEN, M., and HARDY, A.: 'Lateral current spreading in ridge waveguide laser diodes', Appl. Phys. Lett., 1999, 74, pp. 1364-1366
9. KLUDE, M., FEHRER, M., GROßMANN, V., and HOMMEL, D.: 'Influence of driving conditions on the stability of ZnSe-based CW-laser diodes', to be published in J. Cryst. Growth
10. 2, 300K) in SCH GaAs-AlGaAs lasers by using a quantum well confined by a variable-step short-period superlattice', Pis'ma v Z. Tekn. Fiz., 1988, 14, pp. 1803-1807 (Sov. Phys. Techn. Phys. Lett., 1988, 14, pp. 782-784)
11. 2, 300K) in SCH GaAs-AlGaAs lasers by using a quantum well confined by a variable-step short-period superlattice', Pis'ma v Z. Tekn. Fiz., 1988, 14, pp. 1803-1807 (Sov. Phys. Techn. Phys. Lett., 1988, 14, pp. 782-784)
12. ALFEROV, ZH.I., IVANOV, S.V., KOP'EV, P.S., LEDENTSOV, N.N., LUTSENKO, M.E., NEMENOV, M.I., MELTSER, B.YA., USTINOV, V.M., and SHAPOSHNIKOV, S.V.: 'Spreading and surface recombination in quantum well (Al,Ga)As double heterostructure separate confinement lasers with a broad stripe', Fizika i Tekn. Poluprovodn., 1990, 24, pp. 152-158 (Sov. Phys. Semicond., 1990, 24, pp. 92-95)
13. ALFEROV, ZH.I., IVANOV, S.V., KOP'EV, P.S., LEDENTSOV, N.N., LUTSENKO, M.E., NEMENOV, M.I., MELTSER, B.YA., USTINOV, V.M., and SHAPOSHNIKOV, S.V.: 'Spreading and surface recombination in quantum well (Al,Ga)As double heterostructure separate confinement lasers with a broad stripe', Fizika i Tekn. Poluprovodn., 1990, 24, pp. 152-158 (Sov. Phys. Semicond., 1990, 24, pp. 92-95)
14. CHAND, N., BECKER, E.E., VAN DER ZIEL, J.P., CHU, S.N.GU., and DUTTA, N.K.: 'Excellent uniformity and very low (< 50 A/cm) threshold current density strained InGaAs quantum well diode laser on GaAs substrate', Appl. Phys. Lett., 1991, 58, pp. 1704-1706