Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 76, Issue 3, 2000, Pages 217-224

  Chaudhuri, J ^a   Ignatiev, K ^a   Edgar, J H ^a   Xie, Z Y ^a,c   Gao, Y ^b   Rek, Z ^c  

^a Wichita State University   (United States)

^b Kansas State University   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CHLORINE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; HYDROGEN; LOW TEMPERATURE PROPERTIES; THIN FILMS; X RAY CRYSTALLOGRAPHY;

SYNCHROTRON GRAZING INCIDENCE TOPOGRAPHY (SGIT) METHODS; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT);

SILICON CARBIDE;

EID: 0033746941     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00451-7     Document Type: Article

References (13)

1. For a comprehensive review of the current status of silicon carbide processing and device applications, see the special issues of Physica Status Solidi, (a) 162, 1 (1997) and (b) 202, 1 (1997), edited by W.J. Choyke, H. Matsunami, and G. Pensl.
2. H.N. Jayathirha, M.G. Spenser, Mater. Res. Soc. Symp. Proc. 410 (1996) 329.
3. H.S. Kong, B.L. Jiang, J.T. Glass, G.A. Rozgonyi, K.L. More, J. Appl. Phys. 63 (1988) 2645.
4. H.S. Kong, J.T. Glass, R.F. Davis, J. Mater. Res. 4 (1989) 204.
5. Y. Gao, J.H. Edgar, J. Chaudhuri, S.N. Cheema, M.V. Sodorov, D.N. Braski, J. Cryst. Growth 191 (1998) 439.
6. J. Chaudhuri, R. Thokala, J.H. Edgar, B.S. Sywe, Thin Solid Films 274 (1996) 23.
7. M.J. Hordon, B.L. Averbach, Acta Met. 9 (1961) 237.
8. B.K. Tanner, X-ray Diffraction Topography, Pergamon Press, Oxford, UK, 1976, p. 56.
9. M. Sauvage, J.F. Petroff, in: H. Winick, S. Doniach (Eds.), Synchrotron Radiation Research, Plenum Press, New York, 1980, p. 607.
10. J. Chaudhuri, V. Gondhalekar, A.F. Jankowski, J. Appl. Phys. 71 (1992) 3816.
11. Materials Data, Inc., P.O. Box 791, Livermore, CA 94551- 791.
12. Orient Express, A. Filhol, J. Laugier, F. Antier, Y. Raoul, J.P. deCombret, Inst. Laue Langevin, BP 156, 38042 Grenoble, Cedex 9, France.
13. S. Wang, M. Dudley, C.H. Carter Jr, V.F. Tsvetkov, C. Fazi, Mater. Res. Soc. Symp. Proc. 375 (1995) 281.