Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs

Electronics Letters

Volumn 34, Issue 21, 1998, Pages 2067-2069

  Tan, Changhua ^a   Xu, Mingzhen ^a   Wang, Jinyan ^a   Xie, Bing ^a   He, Yandong ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FUNCTIONS; MATHEMATICAL OPERATORS; THRESHOLD VOLTAGE;

PROPORTIONAL DIFFERENCE OPERATOR METHOD; SATURATION CHARACTERISTICS; SATURATION CURRENT;

MOSFET DEVICES;

EID: 0032180388     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981396     Document Type: Article

References (4)

1. SCHRÖDER, D.K: 'Semiconductor material and device characterization' (Wiley, New York, 1990, Chap. 4)
2. SZE, M.S.: 'Physics of semiconductor devices' (1981), 2nd edn. Chaps. 7 and 8
3. GALUP-MONTORO, C., SCHNEIDER, M.C., KOERICH, A.L., and PINTO, R.L.O.: 'MOSTET threshold extraction from voltage only measurements', Electron Lett., 1994, 30, (17), pp. 1458-1459
4. XU, M., TAN, C., HE, Y., and WANG, Y.: 'A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure', Solid-State Electron., 1994, 37, pp. 31-36