Spin-flip Raman scattering in Mn-doped GaAs: Exchange interaction and g factor renormalization

Solid State Communications

Volumn 114, Issue 11, 2000, Pages 573-577

  Sapega, V F ^a   Ruf, T ^a   Cardona, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANTIFERROMAGNETISM; BAND STRUCTURE; COMPOSITION EFFECTS; EXCITONS; MAGNETIC FIELD EFFECTS; MANGANESE; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

EXCHANGE INTERACTION; RENORMALIZATION; SPIN-FLIP RAMAN SCATTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033745071     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00109-5     Document Type: Article

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