Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2 - 300 K

Journal De Physique. IV : JP

Volumn 8, Issue 3, 1998, Pages

  Alawneh, I ^a   Simoen, E ^a   Biesemans, S ^a   De Meyer, K ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING BORON; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

FREEZE OUT EFFECTS;

MOSFET DEVICES;

EID: 0032093427     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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