Time resolved photoluminescence in keV proton irradiated a-SiC:H alloys

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 426-430

  Baeri, A ^a,c   Reitano, R ^a,c   Malvezzi, A M ^b,c   Arena, C ^b,c  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

^c INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; EXCITONS; HYDROGENATION; ION IMPLANTATION; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTON IRRADIATION; PULSED LASER APPLICATIONS; RADIATION EFFECTS; SEMICONDUCTING FILMS;

MULTIPLE EXPONENTIAL DECAY MODEL;

SILICON CARBIDE;

EID: 0033737959     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01215-X     Document Type: Article

References (5)

1. Robertson J. Philos. Mag. 66:1992;615.
2. Palsule C., Gangopadhyay S., Cronauer D., Schroder B. Phys. Rev. B. 48:1993;10804.
3. Forouhi A.R., Bloomer I. Phys. Rev. B. 34:1986;7018.
4. J. Tauc, in: S. Nudelman, S.S. Mitra (Eds.), Optical Properties of Solids, Plenum Press, New York, p. 123.
5. Reitano R., Musumeci P., Baeri P., Foti G. Nucl. Instr. and Meth. B. 148:1999;578.