On the optimization of InGaAs-InAlAs quantum-well structures for electroabsorption modulators

Journal of Lightwave Technology

Volumn 18, Issue 4, 2000, Pages 598-603

  Pires, Mauricio Pamplona ^a,c   De Souza, Patrícia Lustoza ^a,c,d,e,f   Yavich, Boris ^a,g,h,i   Pereira, Ricardo G ^a   Carvalho Jr , Wilson ^b,j,k,l  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

^c Center for Telecommunication Studies

^d UNIVERSITY OF CALIFORNIA   (United States)

^e SAN DIEGO STATE UNIVERSITY   (United States)

^f Physics Department   (Russian Federation)

^g PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^h IOFFE INSTITUTE   (Russian Federation)

ⁱ Center for Telecommunication Studies ^*

^j FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^k TELEBRAS R D Ctr T

^l Brazilian Society of Crystal Growth   (Brazil)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROABSORPTION MODULATORS (EAM);

ELECTROOPTICAL DEVICES; INSERTION LOSSES; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

LIGHT MODULATORS;

EID: 0033735032     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.838135     Document Type: Article

References (21)

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