Performance of strained InGaAs/InAlAs multiple-quantum-well electroabsorption modulators

Journal of Lightwave Technology

Volumn 14, Issue 10, 1996, Pages 2324-2331

  Ido, Tateimi ^b   Sano, Hirohisa ^b   Tanaka, Shigehisa ^b   Moss, David J ^b,c,d,e,f,g   Inoue, Hiroaki ^a,b  

^a IEEE

^b HITACHI LTD   (Japan)

^c UNIVERSITY OF WATERLOO   (Canada)

^d UNIVERSITY OF TORONTO   (Canada)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^f Solid State Optoelectronics C ^*

^g UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; LIGHT MODULATION; LIGHT TRANSMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SIGNAL PROCESSING; STRAIN; TENSILE PROPERTIES;

COMPRESSIVE STRAIN; HIGH MESA RIDGE WAVEGUIDE STRUCTURE; PHOTOGENERATED CARRIERS; QUANTUM CONFINED STARK SHIFT; TENSILE STRAIN;

LIGHT MODULATORS;

EID: 0030263974     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.541224     Document Type: Article

References (28)

1. F. Koyama and K. Iga, "Frequency chirping in external modulators," J. Lightwave Technol., vol. 6, pp. 87-93, 1988.
2. K. Wakita and I. Kotaka, "Multiple-quantum-well optical modulators and their monolithic integration with DFB lasers for optical-fiber communications," Microwave Optical Technol. Lett., vol. 7, pp. 120-128, 1994.
3. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAs/InGaAsP MQW electro-absorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD," IEEE J. Quantum Electron., vol. 29, pp. 2088-2096, 1993.
4. T. Ido, H. Sano, M. Suzuki, S. Tanaka, and H. Inoue, "High-speed MQW electroabsorption optical modulators integrated with low-loss waveguides," IEEE Photon. Technol. Lett., vol. 7, pp. 170-172, 1995.
5. S. Schmitt-Rink, D. S. Chemla, W. H. Knox, and D. A. B. Miller, "How fast is excitonic electroabsorption?" Opt. Lett., vol. 15, p. 60, 1990.
6. O. Mitomi, I. Kotaka, K. Wakita, S. Nojima, K. Kawano, Y. Kawamura, and H. Asai, "40-GHz bandwidth InGaAs/InAlAs multiple quantum well optical intensity modulator," Appl. Opt., vol. 31, pp. 2030-2035, 1992.
7. T. Ido, S. Tanaka, M. Suzuki, and H. Inoue, "MQW electroabsorption optical modulator for 40 Gbit/s modulation," Electron. Lett., vol. 31, pp. 2124-2125, 1995.
8. T. Kataoka, Y. Miyamoto, K. Hagimoto, K. Wakita, and I. Kotaka, "Ultrahigh-speed driverless MQW intensity modulator, and 20 Gbit/s 100 km transmission experiments," Electron. Lett., vol. 28, pp. 897-898, 1992.
9. G. Bastered, E. E. Mendenz, L. L. Chang, and L. Esaki, "Variational calculations on a quantum well in an electric field," Phys. Rev., vol. B-28, pp. 3241-3245, 1983.
10. S. Nojima and K. Wakita, "Optimization of quantum well materials and structures for excitonic electroabsorption effects," Appl. Phys. Lett., vol. 53, pp. 1958-1960, 1988.
11. J. E. Zucker, I. Bar-Joseph, B. I. Miller, U. Koren, and D. S. Chemla, "Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 /μm and 1.55 μm" Appl. Phys. Lett., vol. 54, pp. 10-12, 1988.
12. K. Wakita, I. Kotaka, H. Asai, S. Nojima, and O. Mikami, "High-efficiency electroabsorption in quaternary AlGaInAs quantum-well optical modulators," Electron. Lett., vol. 24, pp. 1324-1325, 1988.
13. F. Devaux, F. Dorgeuille, A. Ougazzaden, F. Huet, M. Carre, A. Carenco, M. Henry, Y. Sorel, J.-F. Kerdiles, and E. Jeanney, "20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW Electroabsorption modulator with 1.2-V drive voltage," IEEE Photon. Technol. Lett., vol. 5, pp. 1288-1290, 1993.
14. T. Ido, H. Sano, D. J. Moss, S. Tanaka, and A. Takai, "Strained InGaAs/InAlAs MQW electro-absorption modulators with large bandwidth and low driving voltage," IEEE Photon. Technol. Lett., vol. 6, pp. 1207-1209, 1994.
15. J. E. Zucker, K. L. Jones, T. H. Chiu, B. Tell, and K. Brown-Goebeler, "Polarization-independent electro-optic waveguide switch using strained InGaAs/InP quantum wells," in Proc. Integrated Photon. Res. '92, PD 7, 1992.
16. F. Devaux, S. Chelles, A. Ougazzaden, A. Micrea, M. Carre, F. Huet, A. Carenco, Y. Sorel, J. F. Kerdiles, and M. Henry, "Full polarization insensitivity of a 20 Gb/s strained-MQW electroabsorption modulator," IEEE Photon. Technol. Lett., vol. 6, pp. 1203-1205, 1994.
17. U. Koren, B. I. Miller, T. L. Koch, G. Eisenstein, R. S. Tuker, I. Bar-Joseph, and D. S. Chemla, "Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator," Appl. Phys. Lett., vol. 51, pp. 1132-1134, 1987.
18. T. H. Wood, J. Z. Pastalan, C. A. Burrus, Jr., B. C. Johnson, B. I. Miller, J. L. deMiguel, U. Koren, and M. G. Yang, "Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation," Appl. Phys. Lett., vol. 57, pp. 1081-1083, 1990.
19. 1-y As quantum well modulators," Electron. Lett., vol. 30, pp. 405-406, 1994.
20. 1-x As grown on InP," Phys. Rev. Lett., vol. 60, PP. 448-451, 1988.
21. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. G. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric field dependence of optical absorption in and near the band gap of quantum-well structures," Phys. Rev., vol. B32, pp. 1043-1060, 1985.
22. F. Devaux, Y. Sorel, and J. F. Kerdiles, "Simple Measurement of Fiber Dispersion and of Chirp Parameter of Intensity Modulated Light Emitter," J. Lightwave Technol, vol. 11, pp. 1937-1940, 1993.
23. F. Dorgeuille and F. Devaux, "On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator," IEEE J. Quantum Electron., vol. 30, pp. 2565-2572, 1994.
24. K. Uomi, A. Murata, S. Sano, R. Takeyari, and A. Takai, "Advantage of 1.55 μm InGaAs/InGaAsP MQW-DFB lasers for reducing waveform degradation and dispersion penalty for 2.5 Gb/s long-span normal fiber transmission," IEEE Photon. Technol. Lett, vol. 4, pp. 657-660, 1992.
25. T. Ido, H. Sano, S. Tanaka, and H. Inoue, "Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators," IEEE Photon. Technol. Lett, vol. 7, pp. 1421-1423, 1995.
26. K. Wakita, I. Kotaka, Y. Kawamura, and O. Mikami, "Dynamic frequency response for InGaAs/InAlAs multiple quantum well optical modulators," IEEE Photon. Technol. Lett, vol. 1, pp. 19-20, 1989.
27. K. Yoshino, K. Wakita, I. Kotaka, S. Kondo, and Y. Noguchi, "Polarization-independent electroabsorption modulator using strain compensated InGaAs/InAlAs MQW structure," in Tech. Dig. CLEO/Pacific Rim'95, 1995, pp. 277.
28. K. Wakita, I. Kotaka, K. Yoshino, S. Kondo, and Y. Noguchi, "Polarization-independent electroabsorption modulator using strain b compensated InGaAs/InAlAs MQW structures," IEEE Photon. Technol. Lett., vol. 7, pp. 1418-1420, 1995.