Determination of the electrical properties of thermally grown ultrathin nitride films

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 589-592

  Pic, N ^a   Glachant, A ^a   Nitsche, S ^a   Hoarau, J Y ^a   Goguenheim, D ^b   Vuillaume, D ^c   Sibai, A ^d   Chaneliere C ^d  

^a CAMPUS DE LUMINY   (France)

^b Maison des Technologies   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCREW CONVEYORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

SELF-ASSEMBLED INSULATING MONOLAYERS (SAM);

SEMICONDUCTING FILMS;

EID: 0033733351     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00267-x     Document Type: Article

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