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Volumn 214, Issue , 2000, Pages 1116-1120
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Performance of CdTe gamma-ray detectors fabricated in a new M-ε-n design
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
CARRIER MOBILITY;
ELECTRIC FIELD EFFECTS;
ELECTRODES;
ENERGY GAP;
EPITAXIAL GROWTH;
GAMMA RAY SPECTROMETERS;
GOLD;
LEAKAGE CURRENTS;
CADMIUM TELLURIDE WAFER;
CHARGE COLLECTION EFFICIENCY;
SPECTRAL RESPONSE;
SEMICONDUCTING CADMIUM TELLURIDE;
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EID: 0033726432
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00285-2 Document Type: Article |
Times cited : (6)
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References (14)
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