Growth process of plasma-deposited ITO films investigated by grazing incidence X-ray techniques

Surface Science

Volumn 454, Issue 1, 2000, Pages 790-795

  Quaas, M ^a   Steffen, H ^a   Hippler, R ^a   Wulff, H ^a  

^a UNIVERSITY OF GREIFSWALD   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; MAGNETRON SPUTTERING; PARTIAL PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SCATTERING;

GRAZING INCIDENCE X RAY DIFFRACTOMETRY (GIXRD); GRAZING INCIDENCE X RAY REFLECTOMETRY (GIXR); INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0033726302     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00079-0     Document Type: Article

References (5)

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3. Wulff H., Klimke J., Quade A. GIT Fachz. Lab. 39:1995;1063.
4. Wulff H., Quaas M., Steffen H. Thin Solid Films. 355-356:1999;395.
5. Smith J.F., Aronson A.J., Chen D., Class W.H. Thin Solid Films. 72:1980;469.