New compact physical submicron MOSFET model for circuit simulation

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 373-392

  Ati, Ali A ^a   Napieralska, M ^a   Napieralski, A ^a   Ciota, Z ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BENCHMARKING; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; MATHEMATICAL MODELS; TRANSCONDUCTANCE;

CIRCUIT SIMULATION; DRAIN CURRENT;

MOSFET DEVICES;

EID: 0033723292     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00509-2     Document Type: Article

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