메뉴 건너뛰기




Volumn 295, Issue 5-6, 1998, Pages 531-534

Rate constants for H+(CH3)4-nGeHn, n=1-3

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000400361     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0009-2614(98)00966-X     Document Type: Article
Times cited : (12)

References (24)
  • 7
    • 0039931919 scopus 로고
    • in: S. Patai, Z. Rappoport (Eds.), ch. 5, Wiley, New York, NY
    • R. Walsh, in: S. Patai, Z. Rappoport (Eds.), The Chemistry of Silicon Compounds, ch. 5, Wiley, New York, NY, 1989.
    • (1989) The Chemistry of Silicon Compounds
    • Walsh, R.1
  • 23
    • 0039931918 scopus 로고    scopus 로고
    • in: J.A.M. Simoes, A. Greenberg, J.F. Liebman (Eds.), ch. 2, Chapman and Hall, London
    • W. Tsang, in: J.A.M. Simoes, A. Greenberg, J.F. Liebman (Eds.), Energetics of Organic Free Radicals, ch. 2, Chapman and Hall, London, 1996.
    • (1996) Energetics of Organic Free Radicals
    • Tsang, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.