Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volumn 183, Issue , 2000, Pages 207-214

  Kobayashi, T ^a   McConville, C F ^b   Nakamura, J ^a   Dorenbos, G ^a   Sone, H ^a   Katayama, T ^a,c   Aono, M ^a,d  

^a RIKEN   (Japan)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF TOKYO   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; LATTICE CONSTANTS; SCATTERING; SEMICONDUCTOR DOPING; SPECTROSCOPY;

BURIED LAYERS; SOLID SOLUBILITY;

SEMICONDUCTING SILICON;

EID: 0033720811     PISSN: 10120386     EISSN: None     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.183-185.207     Document Type: Article

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