Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy

Applied Physics Letters

Volumn 74, Issue 5, 1999, Pages 673-675

  Kobayashi, T ^a   McConville, C F ^b   Dorenbos, G ^a   Iwaki, M ^a   Aono, M ^a,c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRON SCATTERING; ELECTRON SPECTROSCOPY; EPITAXIAL GROWTH; IONS; MOLECULAR DYNAMICS; SILICON; SOLUBILITY; SUBSTRATES;

DEPTH PROFILE; LATTICE LOCATION; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY; SILICON CAPPING LAYER; SOLID PHASE EPITAXY;

ANTIMONY;

EID: 0033072585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122983     Document Type: Article

References (9)

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