Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 211-215

  Liao, Y ^a   Ye, F ^a   Shao, Q Y ^a   Chang, C ^a   Wang, G Z ^a   Fang, R C ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FILM GROWTH; NUCLEATION; PARTICLES (PARTICULATE MATTER); POROUS SILICON; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

HOT FILAMENT CHEMICAL VAPOR DEPOSITION; NUCLEATION DENSITY;

DIAMOND FILMS;

EID: 0033715403     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00767-7     Document Type: Article

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