32.3% efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

35th Intersociety Energy Conversion Engineering Conference and Exhibit

Volumn , Issue , 2000, Pages 516-521

  Lillington, D ^a   Cotai, H ^a   Ermer, J ^a   Friedman, D ^b   Moriarty, T ^b   Duda, A ^b  

^a Spectrolab Inc   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SOLAR CONCENTRATORS;

CONCENTRATION RATIOS; TRIPLE JUNCTION;

SOLAR CELLS;

EID: 0033714830     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. U.S. Photovoltaics Industry PV Technology Roadmap Workshop, Chicago, Illinois, (June 22-25, 1999)
2. N H. Karam et al, "Development and Characterization of High Efficiency GalnP/GaAs/Ge Dual-and Triple Junction Solar Cells", IEEE Trans ED (1999)2116-2125
3. M. F. Lamorte et al, "Computer Modeling of a Two-Junction Monolithic Cascade Solar Cell", IEEE Trans ED, (1980), Vol ED-27, No. 1,231-249
4. nd World PVSEC(1998)Vol3,3-7
5. S. R. Kurtz, D. Myers, and J. M. Olson, Proc. 26 th IEEE PVSC(1997), 875