In situ Fourier transform P-polarized infrared reflection absorption spectroscopic investigation of an interface properties of SiO2/Si(100) deposited using electron cyclotron resonance microwave plasma at room temperature

Thin Solid Films

Volumn 370, Issue 1, 2000, Pages 199-202

  Jia, Yan ^a   Liang, Yu ^a   Liu, Yichun ^a   Liu, Yuexue ^b   Shen, Dezhen ^b  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); PHONONS; PLASMA HEATING; SEMICONDUCTING SILICON; SILICA; SPUTTER DEPOSITION; STRESS ANALYSIS; THICKNESS MEASUREMENT; ULTRATHIN FILMS;

BERREMAN EFFECT; OPTICAL PHONON MODE; TRANSVERSE OPTICAL MODE;

THIN FILMS;

EID: 0033714606     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00955-X     Document Type: Article

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