Electrochemical etching of silicon: A powerful tool for delineating junction profiles in silicon devices by transmission electron microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 576-579

  Spinella, Corrado ^a   D'Arrigo, Giuseppe ^a  

^a CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ARSENIC; ELECTROCHEMISTRY; ETCHING; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROCHEMICAL ETCHING;

SILICON WAFERS;

EID: 0033713504     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591235     Document Type: Article

References (6)

1. D. H. Maher and B. Zhang, J. Vac. Sci. Technol. B 12, 347 (1994).
2. C. Spinella, V. Raineri, and S. U. Campisano, J. Electrochem. Soc. 142, 1601 (1995).
3. C. Spinella, Proceedings of ESSDERC '96, edited by G. Baccarani and M. Rudan (Bologna, 1996), pp. 171-178.
4. C. Spinella, Mater. Res. Soc. Symp. Proc. 469, 323 (1997).
5. C. Spinella, Mater. Sci. Semiconductor Processing 1, 55 (1998).
6. D. R. Turner, J. Electrochem. Soc. 107, 810 (1960).