Advanced compact model for short-channel MOS transistors

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2000, Pages 209-212

  Gouveia Filho, Oscar Da Costa ^a,b   Cunha, Ana Isabela Araujo ^c   Schneider, Marcio Cherem ^a   Galup Montoro, Carlos ^a  

^a FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

^b FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC VARIABLES MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MODELS;

ADVANCED COMPACT MODEL; CARRIER VELOCITY SATURATION; CIRCUIT SIMULATION; INVERSION CHARGE DENSITY; SHORT CHANNEL EFFECTS; SOURCE DRAIN SYMMETRY; UNIFIED CHARGE CONTROL MODEL;

MOSFET DEVICES;

EID: 0033711827     PISSN: 08865930     EISSN: None     Source Type: Journal    
DOI: 10.1109/CICC.2000.852650     Document Type: Article

References (9)

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4. C. Enz F. Krummenacher E. A. Vittoz An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications Analog Integrated Circuits and Signal Processing Journal 8 83 114 July 1995
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7. Y. P. Tsividis K. Suyama MOSFET modeling for analog circuit CAD: problems and prospects IEEE Journal of Solid-State Circuits 29 3 210 216 March 1994
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