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Volumn 3, Issue , 2000, Pages 1899-1902

Si/SiGe HBT active integrated antenna on high resistivity silicon substrate

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE INTEGRATED K-BAND ANTENNA; HARMONIC BALANCE ANALYSIS; SILICON SUBSTRATE;

EID: 0033710466     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (8)

References (11)
  • 1
    • 0032206921 scopus 로고    scopus 로고
    • Progress in active integrated antennas and their applications
    • Nov.
    • Y. Qian, T. Itoh, "Progress in Active Integrated Antennas and Their Applications", IEEE Trans. MTT vol. 46, No. 11, Nov. 1998.
    • (1998) IEEE Trans. MTT , vol.46 , Issue.11
    • Qian, Y.1    Itoh, T.2
  • 3
    • 0032636446 scopus 로고    scopus 로고
    • An active integrated 24-GHz antenna using a flipchip mounted HEMT
    • Jan.
    • M. M. Kaleja, P. Heide, E. M. Biebl, "An Active Integrated 24-GHz Antenna Using a Flipchip Mounted HEMT", IEEE MGWL, vol. 9, no. 1, Jan. 1999.
    • (1999) IEEE MGWL , vol.9 , Issue.1
    • Kaleja, M.M.1    Heide, P.2    Biebl, E.M.3
  • 6
    • 0028404792 scopus 로고
    • Growth of 100 GHz SiGe heterojunction bipolar transistor (HBT) structures
    • E. Kasper, H. Kibbel, H.-J. Herzog, and A. Gruhle, " Growth of 100 GHz SiGe Heterojunction Bipolar Transistor (HBT) Structures," Jpn. J. Appl. Phys., vol. 33, pp. 2415-2418, 1994.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 2415-2418
    • Kasper, E.1    Kibbel, H.2    Herzog, H.-J.3    Gruhle, A.4
  • 7
    • 0000930259 scopus 로고
    • SiGe heterojunction bipolar transistors
    • J.-F. Luy and P. Russer (Eds.), Berlin: Springer
    • A. Gruhle, "SiGe Heterojunction Bipolar Transistors, " in J.-F. Luy and P. Russer (Eds.), "Silicon-Based Millimeter-Wave Devices" Berlin: Springer 1994.
    • (1994) Silicon-Based Millimeter-Wave Devices
    • Gruhle, A.1
  • 9
    • 0030270762 scopus 로고    scopus 로고
    • WIC95, the vertical bipolar inter-company model
    • October
    • C.C McAndrew et al, "WIC95, The Vertical Bipolar Inter-company Model", IEEE Journal of Solid-state Circuits, Vol. 31, No. 10, October 1996.
    • (1996) IEEE Journal of Solid-state Circuits , vol.31 , Issue.10
    • McAndrew, C.C.1
  • 10
    • 0041630399 scopus 로고    scopus 로고
    • Extraction of WIC model parameters for SiGe HBTs including thermal effects, self-Heating and l/f-noise
    • Marseille, France, June
    • F.X. Sinnesbichler, G.R. Olbrich, "Extraction of WIC Model Parameters for SiGe HBTs Including Thermal Effects, Self-Heating and l/f-Noise", Proceedings of the 5th European IC-CAP Meeting, Marseille, France, June 1999.
    • (1999) Proceedings of the 5th European IC-CAP Meeting
    • Sinnesbichler, F.X.1    Olbrich, G.R.2
  • 11
    • 0022161480 scopus 로고
    • Three-port S-parameters ease GaAs FET designing
    • Nov.
    • A. S. Khanna, "Three-port S-parameters ease GaAs FET designing", Microwaves & RF, pp. 81-84, Nov. 1985.
    • (1985) Microwaves & RF , pp. 81-84
    • Khanna, A.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.