Current distribution effects in patterned non-linear magnetoresistive tunnel junctions

Journal of Magnetism and Magnetic Materials

Volumn 217, Issue 1, 2000, Pages 231-235

  Montaigne, F ^a   Nguyen Van Dau, F ^a   Schuhl, A ^a  

^a INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRODES; FINITE ELEMENT METHOD; MAGNETIC MATERIALS; MAGNETORESISTANCE; TUNNEL JUNCTIONS; VOLTAGE MEASUREMENT;

CURRENT DISTRIBUTION EFFECT; TUNNEL MAGNETORESISTANCE;

MAGNETIC FIELD EFFECTS;

EID: 0033704226     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(00)00236-5     Document Type: Article

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