Atomic layer epitaxy growth of ZnSxSe1-x epitaxial layers lattice-matched to Si substrates

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 152-158

  Chen, Nyen Ts ^a   Yokoyama, Meiso ^b   Ueng, Herng Yih ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS;

ATOMIC LAYER EPITAXY; VAN DER PAUW TECHNIQUE; ZINC SULFUR SELENIDE;

SEMICONDUCTING FILMS;

EID: 0033700873     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00433-4     Document Type: Article

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