Native defect characterization in ZnGeP2

Materials Research Society Symposium - Proceedings

Volumn 607, Issue , 2000, Pages 373-378

  Hoffmann, A ^a   Born, H ^b   Naser A ^c   Gehlhoff, W ^a   Maffetone, J ^b   Perlov, D ^c   Ruderman, W ^a   Zwieback, I ^b   Dietz, N ^c   Bachmann, K J ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b INRAD Inc   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; FERMI LEVEL; NONLINEAR OPTICS; PHOTOLUMINESCENCE;

ZINC GERMANIUM DIPHOSPHIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033699544     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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