Defect characterization in ZnGeP2 by time-resolved photoluminescence

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 333-338

  Dietz, N ^a   Busse, W ^a   Gumlich, H E ^a   Ruderman, W ^a   Tsveybak, I ^a   Wood, G ^a   Bachmann, K J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; ELECTRON EMISSION; HIGH PRESSURE EFFECTS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY;

GRADIENT FREEZING (GF); HIGH PRESSURE PHYSICAL VAPOR TRANSPORT (HPVT); ZINC GERMANIUM PHOSPHIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030715972     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)