Frequency translation MMICs using InP HEMT technology

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1996, Pages 193-196

  Tran, Long ^a   Delaney, Michael ^a   Isobe, Russ ^a   Jang, Derek ^a   Brown, Julia ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; FREQUENCY MULTIPLYING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MIXER CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TELECOMMUNICATION SYSTEMS;

CONVERSION GAIN; CONVERSION LOSS; ELECTRON SHEET DENSITY; FREQUENCY TRANSLATION CIRCUITS; INDIUM PHOSPHIDE HEMT TECHNOLOGY; V BAND FREQUENCY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0029701752     PISSN: 00748587     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)