Fabrication of high frequency passives on BICMOS silicon substrates

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 209-212

  Volant, Rich ^a   Groves, Rob ^a   Malinowski, John ^a   Subbanna, S ^a   Begle, Ed ^a   Laney, D ^b   Larson, L ^b   Sakamoto, G ^c   Chan, P ^c,d  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c RAYTHEON COMPANY   (United States)

^d QUALCOMM INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE PASSIVE CIRCUITS; SILICON GERMANIUM; SILICON SUBSTRATE;

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; PASSIVE NETWORKS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSMISSION LINE THEORY;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033694041     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2000.860944     Document Type: Article

References (5)

1. S. Subbanna, D. Ahlgren, D. Harame, B. Meyerson, "How SiGe Evolved into a Manufacturable Semiconductor Production Process" ISSCC Feb. 1999.
2. David Laney, L. Larson et. al., "LOW-Loss Microwave Transmission Lines and Inductors Implemented in a Si/SiGe HBT Process" Proc. IEEE BCTM Sept. 1998]
3. R. Groves, J. Malinowski, R. Volant, D.Jadus, "High Q Inductors in a SiGe BiCMOS process utilizing a thick metal process add-on module," Roc. BCTM 1999
4. R.S. Patel, T.F. Redmond, C. Tessler, D. Tudryn, and D. Pulaski. "Laser Via Ablation Technology for MCM-D Fabrication at IBM Microelectronics", Volume 18, Number 3, Third Quarter, 1995 of The ISHM International Journal of Microcircuits & Electronic Packaging
5. D.Laney, L. Larson, et. al., "Lateral Microwave Transformers and Inductors Implemented in a Si/SiGe HBT Process. IEEE MTT-S Digest 1999