Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 855-858

  Laney, David C ^a   Larson, Lawrence E ^a   Chan, Paul ^a   Malinowski, John ^a   Harame, David ^a   Subbanna, Seshadri ^a   Volant, Rich ^a   Case, Michael ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING COEFFICIENT; IMPEDANCE MISMATCH; MICROWAVE INDUCTORS; MICROWAVE TRANSFORMERS;

ELECTRIC IMPEDANCE; ELECTRIC INDUCTORS; ELECTRIC TRANSFORMERS; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLIC FILMS; METALLIZING; POLYIMIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

MICROWAVE DEVICES;

EID: 0033360526     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. M.V. Schneider, "Microstrip lines for microwave integrated circuits," Bell System Technical Journal, vol. 48, May-June1969, pp. 1421-1444.
2. D.C. Laney, L.E. Larson et. al, "Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process," IEEE BCTM, 1998, pp. 101-104.
3. D. Cheung, J.R. Long et. al, "Monolithic transformers for silicon RFIC design," IEEE BCTM, 1998, pp. 105-108.
4. J.R. Jams, A. Henderson, "High frequency behavior of microstrip open circuit terminations", IEE Journal on Microwaves, Optics and Acoustics, vol. 3. no. 5, PP 205-218, 1979.
5. K.C. Gupta, R. Garg and I.J. Bahl, Microstrip Lines and Slotlines, Artech House Inc., Dedham, Massachusetts, USA, 1979.
6. DuPont 2611/5811 data sheet.
7. R.G. Arnold and D.J. Pedder, "Microwave characterization of microstrip Unes and spiral inductors in MCM-D technology", Proc. 42nd Electronic Components and Technology Conf., pp. 823-829, 1992.
8. D. Harame, et. al., "Si/SiGe epitaxial-base transistors - Part 1: materials, physics and circuits," IEEE Trans. Electron Devices, March, 1995, pp. 455-468.
9. J.N. Burghartz, et al. "RF components implemented in an analog SiGe bipolar technology", IEEE BCTM, 1996, pp. 138-141.
10. R. Groves, K. Stein, D. Harame, D. Jadus, "Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology", IEEE BCTM, 1996, pp.153-156.
11. L. Larson, et. al., "Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits," International Solid-State Circuits Conference, San Francisco, CA, 1996, pp. 80-81.
12. Private correspondence with Prof H. J. Orchard of UCLA.
13. H. H. Skilling, Electrical Engineering Circuits, Wiley, New York, 1965.