Oxide-mediated solid phase epitaxy (OMSPE) of silicon: A new low-temperature epitaxy technique using intentionally grown native oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2147-2150

  Mizushima, Ichiro ^a   Mitani, Yuichiro ^a   Miyano, Kiyotaka ^a   Kambayashi, Shigeru ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Defect; Epitaxy; Oxygen; Silicon; Solid phase epitaxy

Indexed keywords

AMORPHOUS SILICON; ATOMS; CRYSTAL DEFECTS; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; OXIDES; OXYGEN; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT FREE EPITAXY; OXIDE MEDIATED SOLID PHASE EPITAXY; SOLID PHASE EPITAXY;

SEMICONDUCTING SILICON;

EID: 0033691495     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2147     Document Type: Article

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