Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 343-347

  Xu, Ke ^a   Deng, Peizhen ^a   Xu, Jun ^a   Zhou, Guoqing ^a   Liu, Wenjun ^b   Tian, Yulian ^c  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b NANJING UNIVERSITY   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; GALLIUM COMPOUNDS; MORPHOLOGY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; VAPORIZATION;

GALLIUM NITRIDE; LITHIUM GALLIUM OXIDE;

LITHIUM COMPOUNDS;

EID: 0033690234     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00417-6     Document Type: Article

References (6)

1. Strite S., Morkov H. J. Vac. Sci. Technol. B. 10:1992;1237.
2. Xu K., Xu J., Deng P.Z. J. Crystal Growth. 193:1998;127.
3. Kung P., Saxler A., Zhang X., Walker D.et al. Appl. Phys. Lett. 69:1996;2116.
4. Johnson A.M.L., Fujita S., Rowland W.H.et al. Solid State Electron. 41:1997;213.
5. Okada M., Higaki Y., Yanagi T.et al. J. Crystal Growth. 190:1998;213.
6. Ishii T., Tazoh Y., Miyazawa S.et al. J. Crystal Growth. 186:1998;409.