Optical control of the mobility of a MODFET with a layer of self-assembled quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 479-483

  Shields, A J ^a   O'Sullivan, M P ^a,b   Farrer, I ^b   Norman, C E ^a   Ritchie, D A ^b   Cooper, K ^b   Pepper, M ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; ELECTRON GAS; FIELD EFFECT TRANSISTORS; MAGNETOOPTICAL EFFECTS; OPTICAL DATA STORAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

MODULATION DOPED FIELD EFFECT (MODFET) TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033690101     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00364-1     Document Type: Article

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